Electrical and structural characterization of Mg-doped p -type Al0.69 Ga0.31 N films on SiC substrate

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Chakraborty, Arpan ^a   Moe, Craig G ^b   Wu, Yuan ^b   Mates, Tom ^b   Keller, Stacia ^b   Speck, James S ^b   Denbaars, Steven P ^b   Mishra, Umesh K ^b  

^a Cree Santa Barbara Technology Center   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT LAYER THICKNESS; SUBSTRATE GROWTH;

ANNEALING; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GROWTH TEMPERATURE; MAGNESIUM; SUBSTRATES;

SILICON CARBIDE;

EID: 33947309054     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2710303     Document Type: Article

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