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Volumn 207, Issue 11, 2010, Pages 2446-2455

An X-ray diffraction technique for analyzing basal-plane stacking faults in GaN

Author keywords

GaN; nitride semiconductors; stacking faults; structure; X ray diffraction

Indexed keywords

ASYMMETRIC REFLECTIONS; BRAGG PEAKS; C-PLANE SAPPHIRE; COHERENCE LENGTHS; DETECTION LIMITS; FUNCTIONAL DEPENDENCE; GAN; LATTICE PLANE; LATTICE TILTS; M-PLANE; MOCVD; NITRIDE SEMICONDUCTORS; POWDER XRD; RELATIVE DENSITY; STRUCTURE; TYPICAL STACKING FAULTS; X-RAY DIFFRACTION TECHNIQUES;

EID: 78349237415     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026258     Document Type: Article
Times cited : (13)

References (30)
  • 15
    • 0003472812 scopus 로고
    • (Addison-Wesley Publ. Co., Reading, MA)
    • B. E. Warren, X-Ray Diffraction (Addison-Wesley Publ. Co., Reading, MA, 1969).
    • (1969) X-Ray Diffraction
    • Warren, B.E.1
  • 22
    • 78349281011 scopus 로고    scopus 로고
    • presented at 16th Int. Conf. on Crystal growth, Aug. 2010;, to be published
    • Q. S. Paduano, D. W. Weyburne, and, A. J. Drehman, presented at 16th Int. Conf. on Crystal growth, Aug. 2010; J. Cryst. Growth, to be published (2010).
    • (2010) J. Cryst. Growth
    • Paduano, Q.S.1    Weyburne, D.W.2    Drehman, A.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.