Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

Semiconductor Science and Technology

Volumn 25, Issue 8, 2010, Pages

  Sarua, A ^a   Ji, Hangfeng ^a   Pomeroy, J W ^a   Uren, M J ^b   Martin, T ^b   Kuball, M ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ALGAN/GAN HFETS; DEVICE RELIABILITY; ELECTRIC FIELD DISTRIBUTIONS; ELECTRON CHANNEL; FE DOPING; FE-DOPED; GAN BUFFER; GAN BUFFER LAYERS; MICRO-RAMAN SCATTERING; NUMERICAL MODELLING; PHONON FREQUENCIES; PHONON MODE; PIEZOELECTRIC STRAIN; RAMAN DATA; SATURATION VOLTAGE; SOURCE-DRAIN VOLTAGE; SUBSTRATE TYPES;

BIAS VOLTAGE; BUFFER LAYERS; DOPING (ADDITIVES); ELECTRIC FIELDS; GALLIUM ALLOYS; GALLIUM NITRIDE; GATES (TRANSISTOR); PHONONS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; RAMAN SCATTERING;

FIELD EFFECT TRANSISTORS;

EID: 78149273522     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/8/085004     Document Type: Article

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