Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors

Nanotechnology

Volumn 21, Issue 43, 2010, Pages

  Moselund, K E ^a   Ghoneim, H ^a   Schmid, H ^a   Bjork M T ^a   Lortscher E ^a   Karg, S ^a   Signorello, G ^a   Webb, D ^a   Tschudy, M ^a   Beyeler, R ^a   Riel, H ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPED OXIDES; DOPING CONCENTRATION; DOPING MECHANISM; DOPING METHODS; P-TYPE; PLANAR SUBSTRATE; PMOS DEVICES; SATURATION BEHAVIOR; SILICON NANOWIRES; SOLID-STATE DIFFUSION;

BORON; DIFFUSION IN SOLIDS; FIELD EFFECT TRANSISTORS; MOS DEVICES; NANOWIRES; PHOSPHORUS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DOPING (ADDITIVES);

EID: 77958564528     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/43/435202     Document Type: Article

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