Resistivity and surface states density of n - And p -type silicon nanowires

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 945-948

  Vaurette, F ^a   Nys, J P ^a   Deresmes, D ^a   Grandidier, B ^a   Stivenard D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CONDUCTIVITY; LINEWIDTH; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CAPACITANCE-VOLTAGE TECHNIQUES; SEMICONDUCTOR NANOWIRES; SINGLE NANOWIRES; SURFACE STATES DENSITY;

NANOWIRES;

EID: 44649183900     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2908438     Document Type: Article

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