The channel length effect on the electrical performance of suspended-single-wall-carbon-nanotube-based field effect transistors

Nanotechnology

Volumn 20, Issue 17, 2009, Pages

  Assa, B ^a   El Khakani, M A ^a  

^a INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; CHANNEL LENGTHS; EFFECTIVE CARRIER MOBILITIES; ELECTRICAL PERFORMANCE; GAP LENGTHS; IN-SITU; KRF EXCIMER LASERS; LOCALIZED GROWTHS; MULTI-LAYER STACKS; NANO LAYERS; NANO-DEVICES; ORDERS OF MAGNITUDES; P TYPES; PROCESS USE; ROOM TEMPERATURES; SELF-ASSEMBLE; SINGLE WALLS; SINGLE-CRYSTAL SILICONS; SINGLE-WALL CARBON NANOTUBES; SYNTHESIS PROCESS;

ELECTRODES; ELECTRON MULTIPLIERS; EXCIMER LASERS; FIELD EFFECT TRANSISTORS; GAS LASERS; HOLE MOBILITY; IN SITU PROCESSING; KRYPTON; MESFET DEVICES; NANOSTRUCTURED MATERIALS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

COBALT; MOLECULAR LAYER; NANOPARTICLE; NICKEL; SILICON; SINGLE WALLED NANOTUBE;

AIR; ARTICLE; CATALYST; CRYSTAL; ELECTRIC ACTIVITY; ELECTRODE; EXCIMER LASER; FIELD EFFECT TRANSISTOR; GEOMETRY; NANODEVICE; NANOFABRICATION; PRIORITY JOURNAL; ROOM TEMPERATURE; SYNTHESIS;

EID: 65149089062     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/17/175203     Document Type: Article

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