Chemical reaction mechanism in the atomic layer deposition of TaC xNy films using tert -Butylimidotris(diethylamido)tantalum

Journal of the Electrochemical Society

Volumn 157, Issue 6, 2010, Pages

  Kim, Suk Hoon ^a   Song, Moon Kyun ^a   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; DEPOSITION BEHAVIOR; DEPOSITION TEMPERATURES; FILM COMPOSITION; FILM-FORMING SPECIES; GAS CELL; GASPHASE; HYDROCARBON SPECIES; IN-SITU; OXIDE SURFACE; QUADRUPOLE MASS SPECTROMETER; REACTION MECHANISM; ROOM TEMPERATURE; SURFACE DECOMPOSITION; SURFACE REACTION MECHANISM;

ADSORPTION; ATOMIC LAYER DEPOSITION; DEPOSITION; DEPOSITION RATES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GASES; HYDROCARBONS; HYDROGEN; MASS SPECTROMETRY; PLASMA DEPOSITION; SPECTROMETERS; SURFACE REACTIONS; TANNING; TANTALUM; TANTALUM COMPOUNDS;

ATOMS;

EID: 77958502152     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3377003     Document Type: Article

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