Simulation and experimental study on the characteristics of plasma-induced damage and methodology for accurate damage analysis

2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

Volumn , Issue , 2009, Pages 97-100

  Matsuda, Asahiko ^a   Nakakubo, Yoshinori ^a   Ogino, Riki ^a   Ohta, Hiroaki ^a   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Ellipsometry; Molecular dynamics simulation; Plasma etching; Plasma induced damage; Recess structure; Silicon

Indexed keywords

COMPREHENSIVE ANALYSIS; DAMAGE ANALYSIS; DAMAGED LAYERS; DEVICE PERFORMANCE; ENERGETIC ION; ENERGY BAND STRUCTURE; EXPERIMENTAL STUDIES; MOLECULAR DYNAMICS SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; PHYSICAL DAMAGES; PLASMA PARAMETER; PLASMA-INDUCED DAMAGE; RECESS STRUCTURE; SI SUBSTRATES;

BAND STRUCTURE; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; PLASMA ETCHING; SILICON; SPECTROSCOPIC ELLIPSOMETRY;

PLASMAS;

EID: 77950326141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2009.5166274     Document Type: Conference Paper

References (13)

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