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Volumn , Issue , 1998, Pages 217-220
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Effect of plasma damage and different annealing ambients on the generation of latent interface states
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
DEFECTS;
ELECTRON TRANSITIONS;
ELECTRON TRAPS;
GATES (TRANSISTOR);
INTERFACES (MATERIALS);
PLASMA ETCHING;
STRESSES;
CHARGE TRAPPING;
PLASMA INDUCED CHARGING;
MOSFET DEVICES;
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EID: 0032274127
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (9)
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