Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 47, 2010, Pages 4767-4773

  Zhang, Shuai ^a   Shi, Jun Jie ^a   Zhu, Shang Guo ^a   Wang, Fei ^b   Yang, Mao ^a   Bao, Zhi Qiang ^a  

^a PEKING UNIVERSITY   (China)

^b ZHENGZHOU UNIVERSITY   (China)

Author keywords

Electronic structure; InGaN alloy; Luminescence mechanism; Several atom In N cluster

Indexed keywords

ATOMS; BINARY ALLOYS; ELECTRONIC STRUCTURE; III-V SEMICONDUCTORS; INDIUM; INDIUM ALLOYS; LIGHT; LIGHT EMISSION; SEMICONDUCTOR ALLOYS; ZINC SULFIDE;

INGAN ALLOY; INXGA1-XN ALLOYS; LUMINESCENCE MECHANISMS; RANDOM ALLOY; SEVERAL-ATOM IN-N CLUSTER; VALENCE ELECTRON; WURTZITE INGAN; WURTZITES;

GALLIUM ALLOYS;

EID: 77958093986     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2010.09.058     Document Type: Article

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