Reset current distributions in phase change memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 738-742

  Calderoni, A ^a   Ferro, M ^b   Ventrice, D ^a   Ielmini, D ^b   Fantini, P ^a  

^a Numonyx   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Chalcogenide; Non volatile memory modeling; Phase change memories (PCM); Reliability modeling; Variability effects

Indexed keywords

CURRENT DISTRIBUTION; MONTE CARLO SIMULATIONS; NON-VOLATILE MEMORIES; PHASE CHANGE MEMORIES (PCM); RELIABILITY MODELING; RESET CURRENTS; RESET PULSE; SOURCES OF VARIABILITY; STATISTICAL CHARACTERIZATION; TEMPERATURE EFFECTS; TRANSPORT MECHANISM; TRANSPORT MODELS; VARIABILITY EFFECTS;

COMPUTER SIMULATION; ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; RELIABILITY;

PHASE CHANGE MEMORY;

EID: 77957913520     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488740     Document Type: Conference Paper

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