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Volumn , Issue , 2009, Pages 157-160

Statistical modeling of bit distributions in phase change memories

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; BIT DISTRIBUTIONS; IN-PHASE; MEMORY CELL; MULTILEVEL CELL; NANOSCALE SIZE; PHYSICALLY BASED; STATISTICAL MODELING;

EID: 72849146658     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331486     Document Type: Conference Paper
Times cited : (5)

References (13)
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    • S. Lai, "N on-volatile memory technologies: The quest for ever lower cost," IEEE Int. Elect. Dev. Meeting, 2008, pp. 1-6, Dec. 2008.
    • (2008) IEEE Int. Elect. Dev. Meeting, 2008 , pp. 1-6
    • Lai, S.1
  • 6
    • 34547373844 scopus 로고    scopus 로고
    • F. Bedeschi, C. Boffino, E. Bonizzoni, C. Resta, G. Torelli, and D. Zelia, Set-sweep programming pulse for phase-change memories, Proc. of IEEE Int. Symp. on Circuits and Systems 2006, pp. 4 pp.-970, 0-0 2006.
    • F. Bedeschi, C. Boffino, E. Bonizzoni, C. Resta, G. Torelli, and D. Zelia, "Set-sweep programming pulse for phase-change memories," Proc. of IEEE Int. Symp. on Circuits and Systems 2006, pp. 4 pp.-970, 0-0 2006.
  • 8
    • 34548647299 scopus 로고    scopus 로고
    • Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
    • D. lelmini and Y. Zhang, "Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices," Journal of Appl. Phys., vol. 102, no. 5, p. 054517, 2007.
    • (2007) Journal of Appl. Phys , vol.102 , Issue.5 , pp. 054517
    • lelmini, D.1    Zhang, Y.2
  • 10
    • 45149123944 scopus 로고    scopus 로고
    • Threshold switching and phase transition numerical models for phase change memory simulations
    • A. Redaelli, A. Pirovano, A. Benvenuti, and A. L. Lacaita, "Threshold switching and phase transition numerical models for phase change memory simulations," Journal of Appl. Phys., vol. 103, no. 11, p. 111101,2008.
    • (2008) Journal of Appl. Phys , vol.103 , Issue.11 , pp. 111101
    • Redaelli, A.1    Pirovano, A.2    Benvenuti, A.3    Lacaita, A.L.4
  • 12
    • 46649093142 scopus 로고    scopus 로고
    • A compact model of phase-ch ange memory based on rate equations of crystallization and amorphization
    • July
    • K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, and Y. Inoue, "A compact model of phase-ch ange memory based on rate equations of crystallization and amorphization," IEEE Trans. on Electron Devices, vol. 55, no. 7, pp. 1672-1681, July 2008.
    • (2008) IEEE Trans. on Electron Devices , vol.55 , Issue.7 , pp. 1672-1681
    • Sonoda, K.1    Sakai, A.2    Moniwa, M.3    Ishikawa, K.4    Tsuchiya, O.5    Inoue, Y.6
  • 13
    • 0031268714 scopus 로고    scopus 로고
    • Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media
    • C. Peng, L. Cheng, and M. Mansuripur, "Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media," J. of Appl. Phys., vol. 82, no. 9, pp. 4183-4191, 1997.
    • (1997) J. of Appl. Phys , vol.82 , Issue.9 , pp. 4183-4191
    • Peng, C.1    Cheng, L.2    Mansuripur, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.