Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxy

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 94-99

  Park, Chinho ^a   Yeo, Seokki ^a   Kim, Jin Ho ^a   Yoon, Deoksun ^a   Anderson, Timothy J ^b  

^a Yeungnam University   (South Korea)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

GaN; H MOVPE; Photoluminescence; Rocking curve

Indexed keywords

CRYSTALLIZATION; GRAIN SIZE AND SHAPE; MORPHOLOGY; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

H-MOVPE; ROCKING CURVE; ROOM TEMPERATURE;

GALLIUM NITRIDE;

EID: 30944468533     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.077     Document Type: Conference Paper

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