Correlation between I-V slope and TDDB voltage acceleration for Cu/low-k interconnects

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 182-184

  Chen, F ^a   Gambino, J ^a   Shinosky, M ^a   Li, B ^a   Bravo, O ^b   Angyal, M ^b   Badami, D ^a   Aitken, J ^a  

^a IBM   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU/LOW-K INTERCONNECTS; DATA SUPPORT; E-MODEL; ELECTRON FLUENCES; LOW FIELD; LOW K DIELECTRICS; PROCESS IMPROVEMENT; RELIABILITY MONITORING; VOLTAGE ACCELERATION; WAFER LEVEL;

LEAKAGE CURRENTS;

EID: 70349443669     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090382     Document Type: Conference Paper

References (6)

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3. J. Kim, et al., IRPS 2007, pp. 399-404
4. J. W. McPherson, JAP., v95, n12, 2004, pp. 8101-8109
5. B. G. Willis and D. V. Lang, Thin Solid Films, v467, n 1/2, 2004, pp. 284-293
6. S.M. Sze, Physics of semiconductor device, John Wiely & Sons, Honoken, NJ, 1981