A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

  Marchi, M Claudia ^a   Bilmes, Sara A ^a   Ribeiro, C T M ^b   Ochoa, E A ^c   Kleinke, M ^c   Alvarez, F ^c  

^a Instituto de Quimica Fisica de los Materiales Medio Ambiente y Energia   (Argentina)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT TRANSITION; COMPREHENSIVE STUDIES; CRYSTAL STRUCTURE AND MORPHOLOGY; ENERGY MINIMIZATION; INFLUENCE OF OXYGEN; ION BEAM DEPOSITION; ION BEAM DEPOSITION TECHNIQUE; NON-STOICHIOMETRY; TIO; TITANIUM OXIDE THIN FILMS; WIDE-GAP SEMICONDUCTOR; X-RAY PHOTOELECTRONS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHEMICAL MODIFICATION; COALESCENCE; CRYSTAL STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; ION BEAMS; OXIDE FILMS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; STOICHIOMETRY; TITANIUM; TITANIUM OXIDES;

FILM PREPARATION;

EID: 77957744920     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481442     Document Type: Article

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