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Volumn , Issue , 2006, Pages

GaN HFET for W-band power applications

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; GALLIUM ALLOYS; MICROWAVE CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTICAL DESIGN; SEMICONDUCTING GALLIUM; SOLID STATE DEVICE STRUCTURES; TECHNOLOGY;

EID: 46049092224     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346802     Document Type: Conference Paper
Times cited : (83)

References (7)
  • 3
    • 33244490113 scopus 로고    scopus 로고
    • AlGaN/GaN MIS-HFETs With ft of 163 GHz Using Cat-CVD SiN Gate-Insulating Passivation Layers
    • January
    • M. Higashiwaki, T. Matsui, T. Mimura, "AlGaN/GaN MIS-HFETs With ft of 163 GHz Using Cat-CVD SiN Gate-Insulating Passivation Layers", IEEE El Dev. Lett., vol. 27, pp 16-18, January 2006.
    • (2006) IEEE El Dev. Lett , vol.27 , pp. 16-18
    • Higashiwaki, M.1    Matsui, T.2    Mimura, T.3
  • 4
    • 21644431663 scopus 로고    scopus 로고
    • GaN Double Heterojunction Field Effect Transistor for Microwave and Millimeterwave Power Applications, 2004
    • December
    • M. Micovic et al., "GaN Double Heterojunction Field Effect Transistor for Microwave and Millimeterwave Power Applications", 2004. IEDM Technical Digest, pp:807-810, December 2004.
    • (2004) IEDM Technical Digest , pp. 807-810
    • Micovic, M.1
  • 5
    • 31744437149 scopus 로고    scopus 로고
    • Punch-Through in Short-Channel AlGaN/GaN HFETs
    • February
    • M. J. Uren et al., "Punch-Through in Short-Channel AlGaN/GaN HFETs", IEEE Trans. El Dev.. vol. 53, pp. 395-398, February 2006.
    • (2006) IEEE Trans. El Dev , vol.53 , pp. 395-398
    • Uren, M.J.1
  • 6
    • 0001590229 scopus 로고    scopus 로고
    • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
    • March
    • O. Ambacher et al., "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures", J. Appl. Phys.. vol 85, pp 3222-3233, March 1999.
    • (1999) J. Appl. Phys , vol.85 , pp. 3222-3233
    • Ambacher, O.1
  • 7
    • 33645471816 scopus 로고    scopus 로고
    • AlGaN/GaN/InGaN/GaN DH-HEMT's With an InGaN Notch for Enhanced Carrier Confinement
    • January
    • J. Liu, Y. Zhou, J. Zhu, K. M. Lau, K. J. Chen, "AlGaN/GaN/InGaN/GaN DH-HEMT's With an InGaN Notch for Enhanced Carrier Confinement", IEEE El Dev. Lett., vol. 27, pp 10-12, January 2006.
    • (2006) IEEE El Dev. Lett , vol.27 , pp. 10-12
    • Liu, J.1    Zhou, Y.2    Zhu, J.3    Lau, K.M.4    Chen, K.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.