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Volumn , Issue , 2006, Pages
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GaN HFET for W-band power applications
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON DEVICES;
GALLIUM ALLOYS;
MICROWAVE CIRCUITS;
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;
OPTICAL DESIGN;
SEMICONDUCTING GALLIUM;
SOLID STATE DEVICE STRUCTURES;
TECHNOLOGY;
CONTINUOUS WAVE OUTPUT POWER;
DEVICE TECHNOLOGIES;
GAN HFET;
GAN MATERIAL;
GATE PERIPHERY;
HIGH FREQUENCIES;
INP-HEMT;
POWER APPLICATIONS;
POWER DENSITIES;
POWER DEVICES;
POWER GAINS;
POWER-PERFORMANCE;
PULSED MODES;
SOLID-STATE TECHNOLOGIES;
STATE OF THE ARTS;
GALLIUM NITRIDE;
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EID: 46049092224
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2006.346802 Document Type: Conference Paper |
Times cited : (83)
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References (7)
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