GaN HFET for W-band power applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Micovic, M ^a   Kurdoghlian, A ^a   Hashimoto, P ^a   Hu, M ^a   Antcliffe, M ^a   Willadsen, P J ^a   Wong, W S ^a   Bowen, R ^a   Milosavljevic, I ^a   Schmitz, A ^a   Wetzel, M ^a   Chow, D H ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; GALLIUM ALLOYS; MICROWAVE CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTICAL DESIGN; SEMICONDUCTING GALLIUM; SOLID STATE DEVICE STRUCTURES; TECHNOLOGY;

CONTINUOUS WAVE OUTPUT POWER; DEVICE TECHNOLOGIES; GAN HFET; GAN MATERIAL; GATE PERIPHERY; HIGH FREQUENCIES; INP-HEMT; POWER APPLICATIONS; POWER DENSITIES; POWER DEVICES; POWER GAINS; POWER-PERFORMANCE; PULSED MODES; SOLID-STATE TECHNOLOGIES; STATE OF THE ARTS;

GALLIUM NITRIDE;

EID: 46049092224     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346802     Document Type: Conference Paper

References (7)

1. D. L. Ingram et al., "A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier, " IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp 95-98, June 1999. J.
2. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra, "AlGaN/GaN Highe Electron Mobility Transistor With InGaN Back-Barriers", IEEE El Dev. Lett. vol. 27, pp 13-15, January 2006.
3. M. Higashiwaki, T. Matsui, T. Mimura, "AlGaN/GaN MIS-HFETs With ft of 163 GHz Using Cat-CVD SiN Gate-Insulating Passivation Layers", IEEE El Dev. Lett., vol. 27, pp 16-18, January 2006.
4. M. Micovic et al., "GaN Double Heterojunction Field Effect Transistor for Microwave and Millimeterwave Power Applications", 2004. IEDM Technical Digest, pp:807-810, December 2004.
5. M. J. Uren et al., "Punch-Through in Short-Channel AlGaN/GaN HFETs", IEEE Trans. El Dev.. vol. 53, pp. 395-398, February 2006.
6. O. Ambacher et al., "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures", J. Appl. Phys.. vol 85, pp 3222-3233, March 1999.
7. J. Liu, Y. Zhou, J. Zhu, K. M. Lau, K. J. Chen, "AlGaN/GaN/InGaN/GaN DH-HEMT's With an InGaN Notch for Enhanced Carrier Confinement", IEEE El Dev. Lett., vol. 27, pp 10-12, January 2006.