Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 159-160

  Milosavljevic, I ^a   Shinohara, K ^a   Regan, D ^a   Burnham, S ^a   Corrion, A ^a   Hashimoto, P ^a   Wong, D ^a   Hu, M ^a   Butler, C ^a   Schmitz, A ^a   Willadsen, P J ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCE; BARRIER THICKNESS; DEVICE PERFORMANCE; DH-HEMTS; GATE LENGTH; HIGH BREAKDOWN FIELDS; HIGH ELECTRON VELOCITY; HIGH FREQUENCY PERFORMANCE; HIGH-ELECTRON-DENSITY; LARGE BAND; MATERIAL SYSTEMS; ON-RESISTANCE; SOLID STATE POWER AMPLIFIER; VERTICAL DEVICES;

ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; POWER AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957593186     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551886     Document Type: Conference Paper

References (1)

1. M. Higashiwaki et al. IEEE tran. electron. devices, vol 54. No6. 2007 p. 1566.