Optimization of the pi interface properties in thin film microcrystalline silicon solar cell

Solar Energy Materials and Solar Cells

Volumn 94, Issue 11, 2010, Pages 1864-1868

  Agbo, S N ^a   Krc J ^b   Van Swaaij, R A C M M ^a   Zeman, M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

Blue response; pi interface; Thin film microcrystalline silicon; Transient depletion

Indexed keywords

BLUE RESPONSE; CARRIER COLLECTION; CRYSTALLINITIES; DEPOSITION PRESSURES; DIBORANE; EXTERNAL QUANTUM EFFICIENCY; HYDROGENATED MICROCRYSTALLINE SILICON; I-LAYER; INTERFACE PROPERTY; MATERIAL PROPERTY; P-LAYER; PI INTERFACE; PROCESS WINDOW; RF-PECVD; TANDEM SOLAR CELLS; THIN-FILM SILICON SOLAR CELLS;

OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS; SWITCHING CIRCUITS; THIN FILMS; VAPOR DEPOSITION;

MICROCRYSTALLINE SILICON;

EID: 77957150849     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.034     Document Type: Article

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