Measurement of built-in potential in polymorphous Si:H p-i-n solar cells

Physica B: Condensed Matter

Volumn 351, Issue 1-2, 2004, Pages 90-95

  Kaplan, B ^a  

^a MERSIN UNIVERSITY   (Turkey)

Author keywords

Built in potential; Polymorphous Si:H p i n solar cell

Indexed keywords

ACTIVATION ENERGY; DEPOSITION; ELECTRIC POTENTIAL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SOLAR CELLS;

BUILT-IN POTENTIAL; OPEN CIRCUIT VOLTAGE; POLYMORPHOUS SI:H P-I-N SOLAR CELLS;

POLYSILICON;

EID: 3342879246     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.04.073     Document Type: Article

References (11)

1. Longeaud C., Kleider J.P., Gauthier M., Kaplan R., Butte R., Meaudre R., Roca i Cabarrocas P. Schmid J., Ossenbrink H.A., Helm P., Ehmann H., Dunlop E.D. Proceedings of the Second World Conference on Photovoltaic Solar Energy Conversion. 1998;680 Vienna, Austria.
2. Li Yuan-Min, in: E.A. Schiff, M.J. Thompson, A. Madan, K. Tanaka (Eds.), Amorphous Silicon Technology-1993, MRS Symposia Proceedings No. 297, Materials Research Society, Pittsburg, 1993, p. 803.
3. Roca i Cabarrocas P. Mater. Res. Symp. Proc. 507:1998;1079.
4. Roca i Cabarrocas P., Chevrier P., Huc J., Lloret T., Parey J.Y., Schmidtt J.P.M. J. Vac. Sci. Technol. A9:1991;2331.
5. Nonomura S., Okamoto H., Hamakawa Y. Jpn. J. Appl. Phys. 21:1982;464.
6. S. Hegedus, M. Schmidt, N. Salzman, Proceedings of the 19th IEEE Photovoltaic Specialists Conference, IEEE, New York, 1987, p. 210.
7. Hegedus S., Salzman N., Fagen E. J. Appl. Phys. 63:1988;5126.
8. Dalal V. Sol. Cells. 2:1980;261.
9. Szostak D., Goldstein B. J. Appl. Phys. 56:1984;522.
10. Qi Wang, E.A. Schiff, S. Hegedus, in: E.A. Schiff, M. Hack, A. Madan, P. Pomell, A. Matsuda (Eds.), Amorphous Silicon Technology-1994, Vol. 336, Material Research Society, Pittsburg, 1994, p. 365.
11. Kaplan R., Kaplan B. Turk. J. Phys. 25:2001;375.