Uniformity of silicon microcrystallinity in large area RF capacitive reactors

Progress in Photovoltaics: Research and Applications

Volumn 16, Issue 8, 2008, Pages 687-691

  Strahm, Benjamin ^a,b   Hollenstein, Christoph ^a   Howling, Alan A ^a  

^a EPFL   (Switzerland)

^b Roth and Rau Switzerland AG   (Switzerland)

Author keywords

Large area; Microcrystalline silicon; Uniformity

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC POWER DISTRIBUTION; HYDROGEN; MICROCRYSTALLINE SILICON; NONMETALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; THICK FILMS;

CRYSTALLINITY; HYDROGEN DISCHARGES; LARGE AREA; MICROCRYSTALLINITY; NON UNIFORMS; POWER DISTRIBUTIONS; REACTOR DESIGNS; RF POWERS; SILANE CONCENTRATIONS; SILICON THIN FILMS; UNIFORMITY;

AMORPHOUS SILICON;

EID: 56749096013     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.857     Document Type: Article

References (17)

1. Lieberman MA, Booth JP, Chabert P, Rax JM, Turner MM. Standing wave and skin effects in large-area, highfrequency capacitive discharge. Plasma Sources Science and Technology 2002; 11: 283-293. DOI: 10.1088/0963-0252/11/3/310
2. Wider S, Liehr M, Repmann T, Stephan U. Large area plasma CVD for mass production of amorphous and microcrystalline silicon solar cells. 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 2005.
3. Rech B, Repmann T, Wieder S, Ruske M, Stephan U. A new concept for mass production of large area thin-film silicon solar cells on glass. Thin Solid Films 2006; 502: 300-305. DOI: 10.1016/j.tsf.2005.07.307
4. Sansonnens L, Pletzer A, Magni D, Howling AA, Hollenstein C, Schmitt JPM. A voltage uniformity study in large-area reactors for RF plasma deposition. Plasma Sources Science and Technology 1997; 6: 170-178. DOI: 10.1088/0963-0252/6/2/010
5. Li L, Li Y-M, Selvan JAA, Delahoy AE, Levy RA. Correlations between structural properties and performance of microcrystalline silicon solar cells fabricated by conventional RF-PECVD. Journal of Non-Crystalline Solids 2004; 347: 106-113. DOI: 10.1016/j.jnoncrysol.2004.07.082
6. Rech B, Roschek T, Repmann T, Müller J, Schmitz R, Appenzeller W. Microcrystalline silicon for large area thin film solar cells. Thin Solid Films 2003; 427: 157-165. DOI: 10.1016/S0040-6090(02)01210-5
7. 2 discharges. Plasma Sources Science and Technology 2007; 16: 80-89. DOI: 10.1088/0963-0252/16/1/ 011
8. Vetterl O, Finger F, Carius R, Hapke P, Houben L, Kluth O, Lambertz A, Mück A, Rech B, Wagner H. Intrinsic microcrystalline silicon: a newmaterial for photovoltaics. Solar Energy Materials and Solar Cells 2000; 62: 97-108. DOI: 10.1016/S0927-0248(99)00140-3
9. Sansonnens L, Howling AA, Hollenstein C. Degree of dissociation measured by FTIR absorption spectroscopy applied to silane plasmas. Plasma Sources Science and Technology 1998; 7: 114-118. DOI: 10.1088/0963-0252/7/2/ 004
10. Amanatides E, Mataras D, Rapakoulias DE. Deposition rate optimization in SiH4/H2 PECVD of hydrogenated microcrystalline silicon. Thin Solid Films 2001; 383: 15-18. DOI: 10.1016/S0040-6090(00)01603-5
11. Finger F, Hapke P, Luysberg M, Carius R, Wagner H, Scheib M. Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge. Applied Physics Letters 1994; 65: 2588-2590. DOI: 10.1063/1.112604
12. Meiling H, van Sark WGJHM, Bezemer J, van der Weg WF. Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a-Si:H. Journal of Applied Physics 1996; 80: 3546-3551. DOI: 10.1063/1.363227
13. Howling AA, Strahm B, Colsters P, Sansonnens L, Hollenstein C. Fast equilibration of silane/hydrogen plasmas in large area RF capacitive reactors monitored by optical emission spectroscopy. Plasma Sources Science and Technology 2007; 16: 679-696. DOI: 10.1088/0963-0252/16/4/001
14. Sansonnens L, Howling AA, Hollenstein C. A gas flow uniformity study in large-area showerhead reactors for RF plasma deposition. Plasma Sources Science and Technology 2000; 9: 205-209. DOI: 10.1088/0963-0252/9/2/ 314
15. Collins RW, Ferlauto AS, Ferreira GM, Chen C, Koh J, Koval RJ, Lee Y, Pearce JM, Wronski CR. Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry. Solar Energy Materials and Solar Cells 2003; 78: 143-180. DOI: 10.1016/S0927-0248(02)00436-1
16. Schmidt H, Sansonnens L, Howling AA, Hollenstein C, Elyaakoubi M, Schmitt JPM. Improving plasma uniformity using lens-shaped electrodes in a large area VHF reactor. Journal of Applied Physics 2004; 95:4559-4564. DOI: 10.1063/1.1690096
17. Strahm B, Howling AA, Sansonnens L, Hollenstein C, Kroll U, Meier J, Ellert C, Feitknecht L, Ballif C. Microcrystalline silicon deposited above 10 Å/s from pure silane RF-capacitive discharge. Solar Energy Materials and Solar Cells 2007; 91: 495-502. DOI: 10.1016/j.solmat.2006.10.024