Improved 1/f noise characteristics in locally strained Si CMOS using hydrogen-controlled stress liners and embedded SiGe

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 104-105

  Ueno, Tetsuji ^a   Rhee, Hwa Sung ^a   Lee, Ho ^a   Kim, Myung Sun ^a   Cho, Hans S ^b   Baik, Hion Suck ^b   Jung, Youn Hwa ^a   Lee, Hyun Woo ^a   Park, Heung Sik ^a   Lee, Cheol Kyu ^a   Bae, Geum Jong ^a   Lee, Nae In ^a  

^a SAMSUNG Electronics   (South Korea)

^b SATT   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; HYDROGEN; INTERFACES (MATERIALS); SEMICONDUCTING SILICON;

HYDROGEN CONTROLLED STRESS LINERS; HYDROGEN DENSITY; SCATTERING CENTERS;

SPURIOUS SIGNAL NOISE;

EID: 41149094058     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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4. S. Maeda et al., Symp. VLSI Tech. p. 102, 2004
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