Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n -channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 103, Issue 4, 2008, Pages

  Fobelets, Kristel ^a   Rumyantsev, Sergey L ^b,d   Shur, Michael S ^b   Olsen, Sarah H ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); LEAKAGE CURRENTS; MOSFET DEVICES; SILICON; SPURIOUS SIGNAL NOISE;

FLICKER NOISE; INTRINSIC FIELD EFFECT MOBILITY; LOW FREQUENCY NOISE;

GERMANIUM;

EID: 40149111212     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2844553     Document Type: Article

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