InAlAs/InGaAs interband tunnel diodes for SRAM

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2587-2593

  Sutar, Surajit ^a   Zhang, Qin ^b   Seabaugh, Alan ^c  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c University of Notre Dame   (United States)

Author keywords

Interband tunneling; PVCR; PVR; resonant interband tunnel diode (RITD); static random access memory (SRAM); tunnel diode (TD); tunnel SRAM; tunneling based SRAM (TSRAM)

Indexed keywords

INTERBAND TUNNELING; PVCR; PVR; RESONANT INTERBAND TUNNEL DIODE (RITD); STATIC RANDOM ACCESS MEMORY (SRAM); TUNNELING-BASED SRAM (TSRAM);

DIODES; HEAT RADIATION; RESONANT TUNNELING DIODES;

STATIC RANDOM ACCESS STORAGE;

EID: 77956988765     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2059611     Document Type: Article

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