Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 357-359

  Dashiell, M W ^a,b   Kolodzey, James ^a,b   Crozat, P ^c   Aniel, F ^c   Lourtioz, J M ^a,c  

^a IEEE   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Microwave measurements; Molecular beam epitaxial growth; Silicon; Tunnel diodes

Indexed keywords

NEGATIVE DIFFERENTIAL RESISTANCE; RESONANT TUNNELING DIODES; SILICON ESAKI DIODE;

CAPACITANCE; CURRENT DENSITY; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; MICROWAVE MEASUREMENT; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS;

TUNNEL DIODES;

EID: 0036609887     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004234     Document Type: Letter

References (13)

1. Tunneling based SRAM
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4. Si-based interband tunneling devices for high-speed logic and low power memory applications
5. High room temperature peak-to-valley current ratio in Si based Esaki diodes
6. Low-voltage MOBILE logic module based on Si/SiGe interband tunneling diodes
7. Tunnel diodes
8. x resonant tunneling diodes
9. Physical principles of the Esaki diode and some of its properties as a circuit element
10. Internal field emission at narrow silicon and germanium p-n junctions