Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 5, Issue 4, 2000, Pages 215-273

  Li, E Herbert ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

INDIUM GALLIUM ARSENIC PHOSPHIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033880091     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00262-3     Document Type: Article

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