Temperature-and electrode-dependent leakage current behaviour of pulsed laser deposited Ba(Ti0.85Sn0.15)O3 thin films

Journal of Physics D: Applied Physics

Volumn 43, Issue 30, 2010, Pages

  Wang, S J ^a   Lai, M O ^a   Lu, L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CONDUCTION MECHANISM; DEPOSITION TEMPERATURES; ELECTRODE MATERIAL; FOWLER-NORDHEIM; LIMITED SPACE; NEGATIVE BIAS; POOLE-FRENKEL EMISSION; POSITIVE BIAS; PULSED LASER;

BARIUM; BARIUM COMPOUNDS; DEPOSITION; ELECTRIC FIELDS; LEAKAGE CURRENTS; PLATINUM; PULSED LASER DEPOSITION; THIN FILMS; TIN; VAPOR DEPOSITION;

PULSED LASERS;

EID: 77956914243     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/30/305401     Document Type: Article

References (38)

1. Scott J and Paz de Araujo C 1989 Science 246 1400
2. Muralt P 2001 Rep. Prog. Phys. 64 1339
3. Tagantsev A, Sherman V, Astafiev K, Venkatesh J and Setter N 2003 J. Electroceram. 11 5
4. Noda M, Miyamoto T, Murakami S, Nomura T, Inoue K and Okuyama M 2002 Integr. Ferroelectr. 49 305
5. Popovici D, Murakami S, Matsumoto M, Noda M and Okuyama M 2005 Integr. Ferroelectr. 69 247
6. Song S N, Zhai J W, Gao L N, Yao X, Hung T F and Xu Z K 2008 J. Appl. Phys. 104 096107
7. Wang S J, Lu L, Lai M O and Fuh J Y H 2009 J. Appl. Phys. 105 084102
8. Wang S J, Miao S, Reaney I M, Lai M O and Lu L 2010 Appl. Phys. Lett. 96 082901
9. Yasuda N, Ohwa H and Asano S 1996 Japan. J. Appl. Phys. 35 5099
10. Jiwei Z, Bo S, Xi Y and Liangying Z 2004 Mater. Res. Bull. 39 1599
11. Dawber M, Rabe K M and Scott J F 2005 Rev. Mod. Phys. 77 1083
12. Stolichnov I and Tagantsev A 1998 J. Appl. Phys. 84 3216
13. Nagaraj B, Aggarwal S and Ramesh R 2001 J. Appl. Phys. 90 375
14. Nagaraj B, Aggarwal S, Song T K, Sawhney T and Ramesh R 1999 Phys. Rev. B 59 16022
15. Wang Y and Tseng T 1997 J. Appl. Phys. 81 6762
16. Zubko P, Jung D J and Scott J F 2006 J. Appl. Phys. 100 114113
17. Yang H, Tao K, Chen B, Qiu X, Xu B and Zhao B 2002 Appl. Phys. Lett. 81 4817
18. Stolichnov I, Tagantsev A, Setter N, Cross J S and Tsukada M 1999 Appl. Phys. Lett. 75 1790
19. S. J. Wang, M. O. Lai and L. Lu, unpublished
20. Yu Y, Lai M and Lu L 2007 Appl. Phys. A 88 365
21. Zhu T and Lu L 2005 Appl. Phys. A 80 1517
22. Yang H, Jain M, Suvorova N A, Zhou H, Luo H M, Feldmann D M, Dowden P C, DePaula R F, Foltyn S R and Jia Q X 2007 Appl. Phys. Lett. 91 072911
23. Simmons J 1967 Phys. Rev. 155 657
24. Sze S 1981 Physics of Semiconductors vol 15 (New York: Wiley) p 43
25. Scott J F, Araujo C A, Melnick B M, McMillan L D and Zuleeg R 1991 J. Appl. Phys. 70 382
26. Mihara T and Watanabe H 1995 Japan. J. Appl. Phys. 34 5947
27. Rose A 1955 Phys. Rev. 97 1538
28. Lampert M 1956 Phys. Rev. 103 1648
29. Wang C, Takahashi M, Fujino H, Zhao X, Kume E, Horiuchi T and Sakai S 2006 J. Appl. Phys. 99 054104
30. Roy A, Maity S, Dhar A, Bhattacharya D and Ray S K 2009 J. Appl. Phys. 105 044103
31. Ahn K H, Baik S and Kim S S 2002 J. Appl. Phys. 92 2651
32. Wu H, Yuan J, Peng T, Pan Y, Han T and Liu C 2009 Appl. Phys. Lett. 94 122904
33. Pabst G W, Martin L W, Chu Y-H and Ramesh R 2007 Appl. Phys. Lett. 90 072902
34. Li P and Lu T 1991 Phys. Rev. B 43 14261
35. Lampert M A and Mark P 1970 Current Injection in Solids (New York: Academic)
36. Wang S Y, Cheng B L, Wang C, Dai S Y, Lu H B, Zhou Y L, Chen Z H and Yang G Z 2004 Appl. Phys. Lett. 84 4116
37. Khan M, Comyn T and Bell A 2008 Appl. Phys. Lett. 92 072908
38. Qi X, Dho J, Tomov R, Blamire M G and MacManus-Driscoll J L 2005 Appl. Phys. Lett. 86 062903