A dielectric bolometer mode of infrared sensor using a new Ba(Ti 1-xSnx)O3 thin film with a high temperature coefficient of dielectric constant

Integrated Ferroelectrics

Volumn 49, Issue , 2002, Pages 305-314

  Noda, M ^a   Miyamoto, T ^b   Murakami, S ^b   Nomura, T ^c   Inoue, K ^b   Okuyama, M ^a  

^a OSAKA UNIVERSITY   (Japan)

^b OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Ba(Ti 1 xSnx)O3 (BTS); Dielectric bolometer; Ferroelectric thin film; Infrared sensor; Metal organic decomposition (mod); Temperature coefficient of dielectric constant (TCD)

Indexed keywords

BOLOMETERS; ELECTRIC POTENTIAL; FERROELECTRIC THIN FILMS; PERMITTIVITY; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

DIELECTRIC BOLOMETER; INFRARED SENSORS; METAL ORGANIC DECOMPOSITION (MOD); TEMPERATURE COEFFICIENT OF DIELECTRIC CONSTANT (TCD);

INFRARED DETECTORS;

EID: 27844442759     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580215478     Document Type: Article

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