Temperature dependent leakage current behavior of pulsed laser ablated SrBi2 Ta2 O9 thin films

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Roy, A ^a   Maity, S ^a   Dhar, A ^a   Bhattacharya, D ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ARRHENIUS PLOTS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON MOBILITY; FIELD EMISSION; LASER ABLATION; PHASE INTERFACES; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CHILD'S LAWS; CURRENT BEHAVIORS; CURRENT CONDUCTIONS; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; CURRENT TRANSPORT MECHANISMS; CURRENT-VOLTAGE PLOTS; DC LEAKAGE CURRENTS; DEPOSITED FILMS; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; GRAZING INCIDENCE X-RAY DIFFRACTIONS; MICRO-STRUCTURAL; OHM'S LAWS; OHMIC BEHAVIORS; PHASE ANALYSIS; POLY-CRYSTALLINE; PULSED LASERS; PULSED-LASER ABLATIONS; SBT FILMS; SBT THIN FILMS; SHALLOW TRAPS; SI SUBSTRATES; SPACE CHARGE LIMITED CONDUCTIONS; TEMPERATURE DEPENDENTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 61449253017     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3078106     Document Type: Article

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