Enhanced tunable and pyroelectric properties of Ba(Ti0.85Sn 0.15)O3 thin films with Bi1.5Zn 1.0Nb1.5O7 buffer layers

Applied Physics Letters

Volumn 96, Issue 8, 2010, Pages

  Wang, S J ^a   Miao, S ^b   Reaney, I M ^b   Lai, M O ^a   Lu, L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; FIGURE OF MERIT; HETEROSTRUCTURES; INTER-DIFFUSION; INTERFACE MICROSTRUCTURES; PYROELECTRIC COEFFICIENTS; PYROELECTRIC PROPERTIES; SI SUBSTRATES; TUNABILITIES;

BARIUM; BARIUM COMPOUNDS; BUFFER LAYERS; DIELECTRIC DEVICES; EPITAXIAL LAYERS; OPTICAL WAVEGUIDES; PULSED LASER DEPOSITION; PULSED LASERS; SILICON COMPOUNDS; TIN; ZINC;

DIELECTRIC LOSSES;

EID: 77749292156     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309419     Document Type: Article

References (22)

1. A. Tagantsev, V. Sherman, K. Astafiev, J. Venkatesh, and N. Setter, J. Electroceram. JOELFJ 1385-3449 11, 5 (2003). 10.1023/B:JECR.0000015661.81386.e6
2. P. Muralt, Rep. Prog. Phys. RPPHAG 0034-4885 64, 1339 (2001). 10.1088/0034-4885/64/10/203 (Pubitemid 32989733)
3. M. Noda, T. Nomura, D. Popovici, S. Murakami, and M. Okuyama, Integr. Ferroelectr. IFEREU 1058-4587 63, 35 (2004). 10.1080/10584580490458577 (Pubitemid 44778321)
4. C. Lei, A. Bokov, and Z. -G. Ye, J. Appl. Phys. JAPIAU 0021-8979 101, 084105 (2007). 10.1063/1.2715522 (Pubitemid 46685385)
5. S. Song, J. Zhai, L. Gao, and X. Yao, Appl. Phys. Lett. APPLAB 0003-6951 94, 052902 (2009). 10.1063/1.3073743
6. S. J. Wang, L. Lu, M. O. Lai, and J. Y. H. Fuh, J. Appl. Phys. JAPIAU 0021-8979 105, 084102 (2009). 10.1063/1.3097713
7. Q. Zhang and R. Whatmore, J. Appl. Phys. JAPIAU 0021-8979 94, 5228 (2003). 10.1063/1.1613370
8. W. Chang and L. Sengupta, J. Appl. Phys. JAPIAU 0021-8979 92, 3941 (2002). 10.1063/1.1505669 (Pubitemid 35209179)
9. M. Cole, P. Joshi, M. Ervin, M. Wood, and R. Pfeffer, J. Appl. Phys. JAPIAU 0021-8979 92, 3967 (2002). 10.1063/1.1505999 (Pubitemid 35209182)
10. I. Kim, H. Tuller, H. Kim, and J. Park, Appl. Phys. Lett. APPLAB 0003-6951 85, 4705 (2004). 10.1063/1.1821656 (Pubitemid 40009666)
11. W. Zhu, J. Cheng, S. Yu, J. Gong, and Z. Meng, Appl. Phys. Lett. APPLAB 0003-6951 90, 032907 (2007). 10.1063/1.2433029 (Pubitemid 46146378)
12. C. G. Wu, Y. R. Li, J. Zhu, X. Z. Liu, and W. L. Zhang, J. Appl. Phys. JAPIAU 0021-8979 105, 044107 (2009). 10.1063/1.3081971
13. W. Ren, S. Trolier-McKinstry, C. A. Randall, and T. R. Shrout, J. Appl. Phys. JAPIAU 0021-8979 89, 767 (2001). 10.1063/1.1328408 (Pubitemid 33703448)
14. J. Lu and S. Stemmer, Appl. Phys. Lett. APPLAB 0003-6951 83, 2411 (2003). 10.1063/1.1613036
15. S. X. Wang, M. S. Guo, X. H. Sun, T. Liu, M. Y. Li, and X. Z. Zhao, Appl. Phys. Lett. APPLAB 0003-6951 89, 212907 (2006). 10.1063/1.2393093 (Pubitemid 44892298)
16. W. Fu, H. Wang, L. Cao, and Y. Zhou, Appl. Phys. Lett. APPLAB 0003-6951 92, 182910 (2008). 10.1063/1.2924278 (Pubitemid 351662021)
17. S. J. Wang, M. O. Lai, and L. Lu (unpublished).
18. C. S. Hwang, B. T. Lee, C. S. Kang, J. W. Kim, K. H. Lee, H. J. Cho, H. Horii, W. D. Kim, S. I. Lee, Y. B. Roh, and M. Y. Lee, J. Appl. Phys. JAPIAU 0021-8979 83, 3703 (1998). 10.1063/1.366595
19. S. S. Lim, M. S. Han, S. R. Hahn, and S. G. Lee, Jpn. J. Appl. Phys. JJAPA5 0021-4922 39, 4835 (2000). 10.1143/JJAP.39.4835
20. R. Thayer, C. Randall, and S. Trolier-McKinstry, J. Appl. Phys. JAPIAU 0021-8979 94, 1941 (2003). 10.1063/1.1590415
21. M. A. Todd, P. A. Manning, P. P. Donohue, A. G. Brown, and R. Watton, Proc. SPIE PSISDG 0277-786X 4130, 128 (2000). 10.1117/12.409855 (Pubitemid 32256901)
22. R. W. Whatmore, P. C. Osbond, and N. M. Shorrocks, Ferroelectrics FEROA8 0015-0193 76, 351 (1987).