SPICE simulation of nanoscale non-crystalline silicon TFTs in spiking neuron circuits

Midwest Symposium on Circuits and Systems

Volumn , Issue , 2010, Pages 1202-1205

  Cantley, Kurtis D ^a   Subramaniam, Anand ^a   Stiegler, Harvey J ^a   Chapman, Richard A ^a   Vogel, Eric M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BIOLOGICAL MODELS; CRYSTALLINE SILICONS; CURRENT CURVE; DEVICE MODELS; ELECTRICAL CHARACTERISTIC; ELECTRICAL DATA; ELECTRONIC DESIGN; INPUT CURRENT; LOW TEMPERATURES; NANO SCALE; NANOCRYSTALLINES; NANOSCALE DEVICE; NEUROMORPHIC; OUTPUT VOLTAGES; SPICE SIMULATIONS; SPIKING NEURON; SUBMICRON DIMENSION;

CIRCUIT SIMULATION; CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; THIN FILM TRANSISTORS;

SPICE;

EID: 77956567568     PISSN: 15483746     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSCAS.2010.5548881     Document Type: Conference Paper

References (30)

1. L. Chua, "Memristor-The missing circuit element," IEEE Transactions on Circuits Theory, vol. 18, pp. 507-519, 1971.
2. L. O. Chua and S. M. Kang, "Memristive devices and systems," Proceedings of the IEEE, vol. 64, pp. 209-223, 1976.
3. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83, 2008.
4. G. S. Snider, "Spike-timing-dependent learning in memristive nanodevices," IEEE Symposium on Nanoscale Architectures (NANOARCH), 2008, pp. 85-92.
5. C. Mead, "Neuromorphic electronic systems," Proceedings of the IEEE, vol. 78, pp. 1629-1636, 1990.
6. J. Hawkins and S. Blakeslee, On Intelligence. Henry Holt and Company, 2004.
7. http://www.itrs.net.
8. B. Pakkenberg and H. J. G. Gundersen, "Neocortical neuron number in humans: Effect of sex and age," Journal of Comparative Neurology, vol. 384, pp. 312-320, 1997.
9. D. Attwell and S. B. Laughlin, "An Energy Budget for Signaling in the Grey Matter of the Brain," Journal of Cerebral Blood Flow and Metabolism, vol. 21, pp. 1133-1145, 2001.
10. Y. Tang, J. R. Nyengaard, D. M. G. De Groot, and H. J. G. Gundersen, "Total regional and global number of synapses in the human brain neocortex," Synapse, vol. 41, pp. 258-273, 2001.
11. M. S. Shur, H. C. Slade, M. D. Jacunski, A. A. Owusu, and T. Ytterdal, "SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors," Journal of The Electrochemical Society, vol. 144, pp. 2833-2839, 1997.
12. C.-H. Lee, A. Sazonov, and A. Nathan, "High hole and electron mobilities in nanocrystalline silicon thin-film transistors," Journal of Non-Crystalline Solids, vol. 352, pp. 1732-1736, 2006.
13. K.-Y. Chan, D. Knipp, J. Kirchhoff, A. Gordijn, and H. Stiebig, "Ambipolar microcrystalline silicon transistors and inverters," Solid- State Electronics, vol. 53, pp. 635-639, 2009.
14. T. D. Anthopoulos, D. M. de Leeuw, E. Cantatore, S. Setayesh, E. J. Meijer, C. Tanase, J. C. Hummelen, and P. W. M. Blom, "Organic complementary-like inverters employing methanofullerene-based ambipolar field-effect transistors," Applied Physics Letters, vol. 85, pp. 4205-4207, 2004.
15. K.-Y. Chan, A. Gordijn, H. Stiebig, and D. Knipp, "Microcrystalline- Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth Regime," IEEE Transactions on Electron Devices, vol. 56, pp. 1924-1929, 2009.
16. Y. Chen and S. Wagner, "Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film," Applied Physics Letters, vol. 75, pp. 1125-1127, 1999.
17. C. Mead, Analog VLSI and Neural Systems, Addison-Wesley, pp. 193- 204, 1989.
18. C. Koch, "Computation and the single neuron," Nature, vol. 385, pp. 207-210, 1997.
19. C. Koch, Biophysics of Computation. Oxford University Press, 1999.
20. B. Ermentrout, "Linearization of F-I Curves by Adaptation," Neural Computation, vol. 10, pp. 1721-1729, 1998.
21. J. Benda and A. V. M. Herz, "A Universal Model for Spike-Frequency Adaptation," Neural Computation, vol. 15, pp. 2523-2564, 2006.
22. C. E. Stafstrom, P. C. Schwindt, and W. E. Crill, "Repetitive firing in layer V neurons from cat neocortex in vitro," J. Neurophysiology, vol. 52, pp. 264-277, 1984.
23. K. K. Likharev, "Neuromorphic CMOL circuits," Third IEEE Conference on Nanotechnology (IEEE NANO), 2003, pp. 339-342.
24. Ö. Türel, "Neuromorphic architectures for nanoelectronic circuits." International Journal of Circuit Theory and Applications, vol. 32, pp. 277-302, 2004.
25. C. Diorio, P. Hasler, A. Minch, and C. A. Mead, "A single-transistor silicon synapse," IEEE Transactions on Electron Devices, vol. 43, pp. 1972-1980, 1996.
26. S. M. Sze, Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ: John Wiley and Sons, 2007.
27. D. N. Yaung et al., "Narrow width effects of bottom-gate polysilicon thin film transistors," IEEE Electron Device Letters, vol. 19, pp. 429- 431, 1998.
28. N. Yamauchi, J.-J. J. Hajjar, and R. Reif, "Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film," IEEE Transactions on Electron Devices, vol. 38, pp. 55-60, 1991.
29. H.-W. Zan, T.-C. Chang, P.-S. Shih, D.-Z. Peng, T.-Y. Huang, and C.- Y. Chang, "Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors," Japanese Journal of Applied Physics, vol. 42, p. 28, 2003.
30. K. D. Cantley, R. R. Pratiwadi, H. C. Floresca, J. Wang, H. Stiegler, R. A. Chapman, M. J. Kim, and E. M. Vogel, unpublished.