Ambipolar microcrystalline silicon transistors and inverters

Solid-State Electronics

Volumn 53, Issue 6, 2009, Pages 635-639

  Chan, Kah Yoong ^a,b   Knipp, Dietmar ^b   Kirchhoff, Joachim ^a   Gordijn, Aad ^a   Stiebig, Helmut ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b JACOBS UNIVERSITY BREMEN   (Germany)

Author keywords

Ambipolar inverter; Ambipolar transistor; Microcrystalline silicon; TFTs

Indexed keywords

AMBIPOLAR INVERTER; AMBIPOLAR TRANSISTOR; CONTACT EFFECTS; ELECTRICAL PARAMETERS; ELECTRONIC APPLICATIONS; HYDROGENATED MICROCRYSTALLINE SILICONS; LOW DEPOSITION TEMPERATURES; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; TFTS;

CARRIER MOBILITY; NONMETALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM TRANSISTORS; TRANSISTORS;

MICROCRYSTALLINE SILICON;

EID: 67349182159     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.002     Document Type: Article

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