Hydrogen dilution-induced chemical state modification in silicon nanowires

Journal of Physical Chemistry C

Volumn 114, Issue 36, 2010, Pages 15274-15279

  Swain, Bhabani S ^a   Swain, Bibhu P ^b   Hwang, Nong M ^a  

^a Seoul National University   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT PRESSURES; ATMOSPHERIC CHEMICAL VAPOR DEPOSITIONS; AVERAGE DIAMETER; BONDING NETWORKS; BONDING STRENGTH; CHEMICAL STATE; EFFECT OF HYDROGEN; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; HYDROGEN DILUTION; HYDROGEN FLOW RATE; LOWER ENERGIES; SILICON CONTENTS; SILICON NANOWIRES;

CHEMICAL VAPOR DEPOSITION; FIELD EMISSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; GOLD COATINGS; HYDROGEN; NANOWIRES; OXYGEN; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL MODIFICATION;

EID: 77956539683     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp102241a     Document Type: Article

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