Hydrogen passivation of donors and hydrogen states in heavily doped n-type silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 3937-3941

  Fukata, Naoki ^a   Sasaki, Shinichi ^a   Fujimura, Shuzo ^b   Haneda, Hajime ^c   Murakami, Kouichi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

ESR of donors; H atom treatment; P Si H complex; Platelets; Screening effect

Indexed keywords

CALCULATIONS; DOPING (ADDITIVES); EXPERIMENTS; HYDROGENATION; PASSIVATION; PHOSPHORUS;

HYDROGEN PASSIVATION; HYDROGEN STATES; SCREENING EFFECT;

SEMICONDUCTING SILICON;

EID: 0030193756     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3937     Document Type: Article

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