Microscopic properties of H2 diluted HWCVD deposited a-SiC:H film

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 55-57

  Swain, Bibhu P ^a   Dusane, Rajiv O ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Dielectric constant; HWCVD

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRODES; HYDROGEN; PERMITTIVITY; SILICON CARBIDE;

AMORPHOUS SILICON CARBON; HWCVD; NETWORK BONDING;

THIN FILMS;

EID: 30344464998     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.024     Document Type: Conference Paper

References (13)

1. S.P. Jeng, M. Chang, T. Kroger, P. McAnally, and R.H. Havemann VLSI Tech. Dig. 7-9 1994 73
2. International Technology Roadmap for Semiconductors-Interconnect, 2001 ed., Semiconductor Industry Association, International SEMATECH, Austin, TX, 2001.
3. A. Cros, M.O. Aboelfotoh, and N.K. Tu J. Appl. Phy. 67 1990 3328
4. L. Stolt, and F. Dehrule Thin Solid Films 189 1990 269
5. T. Lauinger, J. Moschner, A.G. Aberle, A.G. Hezelin, in: Conference Record of the 25th IEEE Photovoltaic Specialists Conference, 1996, 413.
6. A.L.S. Loke, C. Ryu, C.P. Yue, J.S.H. Cho, and S.S. Wang IEEE Electron. Dev. Lett. 17 1996 549
7. D. Shamiryan, T. Abell, F. Iacopi, and K. Maex Mater. Today 34 2004 34
8. R.O. Dusane, S.V. Rajarshi, D.J. Goyal, and V.G. Bhide J. Appl. Phys. 76 1994 242
9. M. Fayolle, G. Passemard, M. Assous, D. Louis, A. Beverina, Y. Gobil, J. Cluzel, and L. Arnaud Microelectron. Eng. 60 2002 119
10. F. Lanckmans, W.D. Gray, B. Brijs, and K. Maex Microelectron. Eng. 55 2001 329
11. A. Kumbhar, S. Bauer, B. Schroeder, and R.O. Dusane J. Non. Cryst. Solids 198-200 1998 452
12. Alka Kumbhar, Samadhan B. Patil, Sanjay Kumar, R. Lal, and R.O. Dusane Thin Solid Films 395 2001 244
13. Bibhu, P. Swain, T.K. Gundu Rao, Mainak Ray, J. Gupta, R.O. Dusane, Thin Solid Films, in press.