Effect of H 2 dilution on a-CN:H films deposited by hot-wire chemical vapor deposition

Applied Surface Science

Volumn 255, Issue 22, 2009, Pages 9264-9267

  Swain, Bibhu P ^a   Swain, Bhabani S ^a   Hwang, Nong M ^a  

^a Seoul National University   (South Korea)

Author keywords

a CN:H; HWCVD; Valence band; XPS

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS FILMS; CARBON FILMS; CHEMICAL VAPOR DEPOSITION; THIN FILMS; VALENCE BANDS;

A-CN:H; ELECTRONIC ENVIRONMENTS; H2 FLOW RATE; HOT WIRE CHEMICAL VAPOR DEPOSITION; HWCVD; HYDROGENATED AMORPHOUS CARBON NITRIDE; NITROGEN CONTENT; TOTAL CARBON;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 68649128196     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.07.020     Document Type: Article

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