Device reliability study of high gate electric field effects in AlGaN/GaN high electron mobility transistors using low frequency noise spectroscopy

Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

  Rao, Hemant ^a   Bosman, Gijs ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEFECT STATE; DEVICE RELIABILITY; ELECTRON TRAPPING; GATE CURRENT NOISE; GATE EDGE; GATE STACKS; LOW-FREQUENCY NOISE; PRE-STRESSED; PRESTRESS LEVELS; REVERSE BIAS VOLTAGE; THRESHOLD VOLTAGE SHIFTS;

DRAIN CURRENT; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; GALLIUM NITRIDE; METAL RECOVERY; THERMAL NOISE; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956497762     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3475991     Document Type: Article

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