Semiconductor device physics and design

Semiconductor Device Physics and Design

Volumn , Issue , 2008, Pages 1-559

  Mishra, Umesh K ^a   Singh, Jasprit ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84892330658     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4020-6481-4     Document Type: Book

References (63)

1. M. M. Woolfson, An Introduction to Crystallography, Cambridge University Press (1997).
2. McGraw-Hill Encyclopedia of Science and Technology, Volume 4, McGraw-Hill (1997).
3. A. C. Gossard (ed.), Epitaxial Microstructures in Semiconductors and Semi metals, Volume 40, Academic Press (1994).
4. G. Benedek (ed.), Point and Extended Defects in Semiconductors, Plenum Publishing Press (1989).
5. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, (O. Madelung, M. Schultz, and H. Weiss, eds.), Springer (1985).
6. J. F. Nye, Physical Properties of Crystals: Their Representation by Tensors and Matrices, Oxford University Press (1987).
7. T. Ikeda, Fundamentals of Piezoelectricity, Oxford University Press (1990).
8. E. Bernardini, V. Fiorentini, and D. Vanderbilt, Spontaneous Polarization, and Piezoelectric Constant of III-V Nitrides, Physical Review B, vol. 56, p. R10024 (1997).
9. J. H. Edgar, Properties of Group III Nitrides, INSPEC, London (1994).
10. H.C. Casey Jr. and M.B. Panish, Heterostructure Lasers, Part A, "Fundamental Principles," Part B, "Materials and Operating Characteristics," Academic Press, New York (1978).
11. R.E. Hummel, Electronic Properties of Materials-An Introduction for Engineers, Springer Verlag, New York (1985).
12. Landolt-Bornstein, Numerical Date and Functional Relationship in Science and Technology, Vol. 22, Eds. O. Madelung, M. Schulz, and H. Weiss, Springer-Verlog, New York (1987).
13. K. Seeger, Semiconductor Physics: An Introduction, Springer, Berlin (1985).
14. H.F. Wolf, Semiconductors, Wiley-Interscience, New York (1971).
15. A.G. Milnes and D.L. Feucht, Heterojunctions and Metal Semiconductor Junctions, Academic Press, New York (1972).
16. For a simple discussion of electrons in quantum wells any book on basic quantum mechanics is adequate. An example is L. Schiff, Quantum Mechanics, McGraw-Hill, New York (1968).
17. J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures, Cambridge University Press (2003).
18. J.S. Blakemore, Electron. Commun., 29, 131 (1952).
19. J.S. Blakemore, Semiconductor Statistics, Pergamon Press, New York (1962) reprinted by Dover, New York (1988).
20. K. Seeger, Semiconductor Physics: An Introduction, Springer Verlag, Berlin (1985)
21. M. Lundstrom, Fundamentals of Carrier Transport (Modular Series on Solid State Devices), eds. by G.W, Neudeck and R.F. Pierret, Addison-Wesley, Reading, MA, vol. X (1990).
22. J. Singh, Modern Physics for Engineers, Wiley-Interscience, New York (1999).
23. K. Seeger, Semiconductor Physics, Springer Verlag, New York (1985).
24. J. Singh, Electronic and Optoelectronic Properties of Semiconductors, Cambridge University Press (2003).
25. N.F. Mott and E.A. Davis, Electronic Processes in Non-Crystalline Materials, Clarenden Press, Oxford (1971).
26. A.J. Moulson and J.M. Herbert, Electroceramics: Materials, Properties, and Applications, Chapman & Hall (1992).
27. M. S. Tyagi, Introduction to Semiconductor Materials and Devices (John Wiley and Sons, New York, 1991).
28. B. G. Streetman and S. Banerjee, Solid State Electronic Devices (Prentice-Hall, Englewood Cliffs, NJ, 1999).
29. G.W. Neudeck, "Modular Series on Solid State Devices," Vol. 11, The P-N Junction Diode, (Addison-Wesley, Reading, MA, 1983).
30. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits (JohnWiley and Sons, New York, 1986).
31. M. H. Lee and S. M. Sze, "Orientation Dependence of Breakdown Voltage in GaAs," Solid State Electronics 23, 1007 (1980).
32. S. M. Sze, Physics of Semiconductor Devices (John Wiley and Sons, New York, 1981).
33. S. M. Sze and G. Gibbons, Applied Physics Letters 8, 112 (1986).
34. R. H. Kingston, "Switching Time in Junction Diodes and Junction Transistors," Proc. IRE 42, 829 (1954).
35. M. S. Tyagi, Introduction to Semiconductor Materials and Devices (John Wiley and Sons, New York, 1991).
36. D. A. Neamen, Semiconductor Physics and Devices: Basic Principles (Irwin, Homewood, IL, 1992).
37. • D. A. Neamen, Semiconductor Physics and Devices: Basic Principles (Irwin, Boston, 1997).
38. • M. S. Tyagi, Introduction to Semiconductor Materials and Devices (John Wiley and Sons, New York, 1991).
39. • R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits (Wiley, New York, 1986).
40. D. A. Neaman, Semiconductor Physics and Devices, Basic Principles (Irwin, Boston, 1997).
41. G. W. Neudeck, The Bipolar Junction Transistor (Vol. 3 of the Modular Series on Solid State Devices, Addison-Wesley, Reading, MA, 1989).
42. D. J. Roulston, Bipolar Semiconductor Devices (McGraw-Hill, New York, 1990).
43. B. G. Streetman and S. Bannerjee, Solid State Electronic Devices (Prentice-Hall, Englewood Cliffs, NJ, 2000).
44. D. A. Hodges and H. G. Jackson, Analysis and Design of Digital Integrated Circuits (McGraw-Hill, New York, 1988).
45. D. A. Neaman, Semiconductor Physics and Devices (Irwin, Boston, MA, 1997).
46. R. F. Pierret, Field Effect Devices (Vol. 4 of the Modular Series on Solid State Devices, Addison-Wesley, Reading, MA, 1990).
47. M. Shur, Physics of Semiconductor Devices (Prentice-Hall, Englewood Cliffs, NJ, 1990).
48. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
49. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
50. D. A. Neamen, Semiconductor Physics and Devices: Basic Principles (Irwin, Boston, MA, 1997).
51. R. F. Pierret, Field Effect Devices (Vol. 4 of the Modular Series on Solid State Devices, Addison-Wesley, Reading, MA, 1990).
52. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
53. W. M. Werner, "The Work Function Difference of the MOS System with Aluminum Field Plates and Polycrystalline Silicon Field Plates" Solid State Electronics, 17, 769-75 (1974).
54. M. Zambuto, Semiconductor Devices (McGraw-Hill, New York, 1989).
55. Articles in Nanostructure Physics and Fabrication (edited by M. A. Reed and W. P. Kirk, Academic Press, New York, 1989).
56. Datta, Supriyo, Electronic Transport in Mesoscopic Systems (Cambridge University Press, 1995).
57. Ferry, D. K., Semiconductors (Macmillan, New York, 1991).
58. Gradert, Hermann and H. Michel, Editors, Single Charge Tunneling: Coulomb Blockade Phenomenon in Nanostructures (NATO ASI Series, B, Physics, vol. 294), Plenum Publishing Corporation, 1992.
59. Janssen, Martin, Fluctuations and Localization in Mesoscopic Electron Systems (World Scientific Publishing Company, 1991).
60. Landauer, R., Philos. Mag., 21, 863 (1970).
61. Murayama, Yoshinasa, Mesoscopic Systems, (John Wiley and Sons, 2001).
62. Physics Today, (Dec. 1988). Covers the important aspects of physics in mesoscopic structures.
63. VanWees, B. J., H. Van Houten, C.W. J. Beenakker, J. L.Williamson, L. P. Kauwenhoven, D. van der Marel, and C. T. Foxon, Phys. Rev. Lett., 60, 848 (1988).