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Volumn 1129, Issue , 2009, Pages 625-628

Low frequency noise evolution of AlGaN/GaN HEMT after 2000 hours of HTRB and HTO life tests

Author keywords

AlGaN GaN HEMT; HTRB and HTO life tests; Low frequency noise; Reliability

Indexed keywords


EID: 67650491656     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3140552     Document Type: Conference Paper
Times cited : (4)

References (6)
  • 5
    • 24144440420 scopus 로고    scopus 로고
    • A. Sozza St aX., Microelectronics Reliability 45, 1617-1621 (2005).
    • A. Sozza St aX., Microelectronics Reliability 45, 1617-1621 (2005).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.