Edge effects on gate tunneling current in HEMTs

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2614-2622

  Sathaiya, D Mahaveer ^a,b   Karmalkar, Shreepad ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

2 D effects; AlGaN; Edge effects; Field emission; High electron mobility transistor (HEMT); Reverse gate leakage; Thermionic field emission; Thermionic trap assisted tunneling (TTT)

Indexed keywords

ELECTRON TRAPS; ELECTRON TUNNELING; FIELD EMISSION; GATES (TRANSISTOR); PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS;

EDGE EFFECTS; REVERSE GATE LEAKAGE; THERMIONIC TRAP-ASSISTED TUNNELING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 35148845016     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904993     Document Type: Article

References (18)

1. M. H. Somerville and J. A. del Alamo, "A model for tunneling-limited breakdown in high-power HEMTs," in IEDM Tech. Dig., 1996, pp. 35-38.
2. D. M. Sathaiya and S. Karmalkar, "Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN/GaN HEMTs," J. Appl. Phys., vol. 99, no. 9, p. 093701, May 2006.
3. E. J. Miller, X. Z. Dang, and E. T. Yu, "Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors," J. Appl. Phys., vol. 88, no. 10, pp. 5951-5958, Nov. 2000.
4. A. Asenov, S. Kaya, and A. R. Brown, "Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness," IEEE Trans. Electron Devices, vol. 50, no. 5, pp. 1254-1260, May 2003.
5. Y. C. Chou, D. Leung, I. Smorchkova, M. Wojtowicz, R. Grundbacher, L. Callejo, Q. Kan, R. Lai, P. H. Liu, D. Eng, and A. Oki, "Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting," Microelectron. Reliab., vol. 44, no. 7, pp. 1033-1038, Jul. 2004.
6. J. Bernat, P. Javorka, A. Fox, M. Marso, H. Luth, and P. Kordos, "Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs," Solid State Electron., vol. 47, no. 11, pp. 2097-2103, Nov. 2003.
7. T. R. Prunty, J. A. Smart, E. M. Chumbes, B. K. Ridley, L. F. Eastman, and J. R. Shealy, "Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors," in Proc. High Perform. Devices Conf., 2000, pp. 208-214.
8. E. T. Yu, X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, S. S. Lau, G. J. Sullivan, K. S. Boutros, and J. M. Redwing, "Schottky barrier engineering in III-V nitrides via the piezoelectric effect," Appl. Phys. Lett., vol. 73, no. 13, pp. 1880-1882, Sep. 1998.
9. S. Karmalkar and N. Soudabi, "A closed-form model of the drain-voltage dependence of the OFF-state channel electric field in a HEMT with a field plate," IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2430-2437, Oct. 2006.
10. S. Karmalkar, N. Satyan, and D. M. Sathaiya, "On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 27, no. 2, pp. 87-89, Feb. 2006.
11. H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, "Mechanisms of current collapse and gate leakage currents in AlGaN-GaN heterostructure field effect transistor," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 21, no. 4, pp. 1844-1855, Jul./Aug. 2003.
12. S. Karmalkar, D. M. Sathaiya, and M. S. Shur, "Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors," Appl. Phys. Lett., vol. 82, no. 22, pp. 3976-3978, Jun 2003.
13. S. Karmalkar and D. M. Sathaiya, "Unified closed-form model of thermionic - Field and field emissions through a triangular potential barrier," Appl. Phys. Lett., vol. 82, no. 9, pp. 1431-1433, Mar. 2003.
14. W. S. Tan, P. A. Houston, P. J. Parbrook, G. Hill, and R. J. Airey, "Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors," J. Phys. D, Appl. Phys. vol. 35, no. 7, pp. 595-598, 2002.
15. K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, "Local electronic properties of AlGaN/GaN heterostructure probed by scanning capacitance microscopy," J. Electron. Mater., vol. 29, no. 3, pp. 274-280, Mar. 2000.
16. x passivation on AlGaN/GaN HFETs electrical traps," Solid State Electron., vol. 49, no. 10, pp. 1589-1594, Oct. 2005.
17. A. van der Zeal, Solid State Physical Electronics. New Delhi, India: Prentice-Hall, 1971, pp. 618-619.
18. D. M. Sathaiya, A. Khandelwal, and S. Karmalkar, "A new model of total emission through a parabolic potential barrier," in Proc. Int. Workshop Phys. Semicond. Devices, 2003, vol. 1, pp. 600-602.