Ab initio and scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c (8×2 ) structure

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 24, 2010, Pages

  Lang J J K ^a   Punkkinen, M P J ^a,b   Laukkanen, P ^a,c   Kuzmin, M ^a,d   Tuominen, V ^a   Pessa, M ^c   Guina, M ^c   Vayrynen I J ^a   Kokko, K ^a   Johansson, B ^b,e   Vitos, L ^b,e,f  

^a UNIVERSITY OF TURKU   (Finland)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^d IOFFE INSTITUTE   (Russian Federation)

^e UPPSALA UNIVERSITY   (Sweden)

^f WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956322610     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.245305     Document Type: Article

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