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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 23, 2002, Pages 2333111-2333114

Structure analysis of the Ga-stabilized GaAs(001)-c(8 × 2) surface at high temperatures

(5) Ohtake, Akihiro a Tsukamoto, Shiro a Pristovsek, Markus a Koguchi, Nobuyuki a Ozeki, Masashi a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; GALLIUM ARSENIDE;

ARTICLE; ELECTRON DIFFRACTION; MOLECULAR MODEL; SEMICONDUCTOR; SURFACE PROPERTY; TEMPERATURE DEPENDENCE;

EID: 0037096573 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.