Ab initio study of the GaAs(001)-In(4×2) surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 4, 2003, Pages 453251-453255

  Miwa, R H ^a   Miotto, R ^b   Ferraz, A C ^c   Srivastava, G P ^d  

^a FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

^b UNIVERSITY OF BRASILIA   (Brazil)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

^d UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; INDIUM;

AB INITIO CALCULATION; ARTICLE; CALCULATION; ENERGY; MATHEMATICAL ANALYSIS; SCANNING TUNNELING MICROSCOPY;

EID: 0037438724     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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