Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si (111 ) -√3×√3-Bi

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 24, 2010, Pages

  Mysliveček, Josef ^a,b   Dvořák, Filip ^a   Strózecka, Anna ^b,c   Voigtländer, Bert ^b  

^a CHARLES UNIVERSITY   (Czech Republic)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956314215     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.245427     Document Type: Article

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64. - comparable to that on Si(111)- √3×√3-Bi surface also on a Si (111) - 7 × 7 surface before terminating with Bi.