Influence of surface states on tunneling spectra of n -type GaAs(110) surfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 7, 2009, Pages

  Ishida, Nobuyuki ^a   Sueoka, Kazuhisa ^a   Feenstra, R M ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70249098931     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.075320     Document Type: Article

References (18)

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18. For extended states, the integral is performed far into the semiconductor where the potential is negligible and the wave function are matched to appropriate traveling waves in the bulk semiconductor. For localized states, the integral is performed similarly far into the semiconductor and the occurrence of a localized state corresponds to the situation when the wave function obtained from the integration goes to zero (as opposed to diverging) at this large value of z.