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Physical Review Letters

Volumn 103, Issue 9, 2009, Pages

Nanoscale pit formation at 2D Ge layers on Si: Influence of energy and entropy

(3) Romanyuk, Konstantin a Brona, Jacek a,b Voigtländer, Bert a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b UNIVERSITY OF WROC AW (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; GE ATOM; NANO SCALE; PIT FORMATION; SI (1 1 1); STEP EDGE; STRUCTURAL STABILITIES; TWO-DIMENSIONAL;

ATOMS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; STABILITY;

GERMANIUM;

EID: 69249135524 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.103.096101 Document Type: Article

Times cited : (9)

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