Electronic states of chemically treated SiC surfaces

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Nie, Shu ^a   Feenstra, R M ^a   Ke, Y ^b   Devaty, R P ^b   Choyke, W J ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTIC POLISHING; ELECTRON TUNNELING; ELECTRONIC STATES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACE CHARGE;

CHARGE ACCUMULATION; HYDROGEN ETCHING;

SILICON CARBIDE;

EID: 38149003060     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2829804     Document Type: Article

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