Defects in gallium nitride nanowires: First principles calculations

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

  Wang, Zhiguo ^a,b   Li, Jingbo ^b   Gao, Fei ^c   Weber, William J ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ANION VACANCY; ANTISITES; ATOMIC CONFIGURATION; CORE REGION; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; INTERSTITIALS; NATIVE DEFECT; NEUTRAL-CHARGE; SURFACE REGION;

GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; SURFACE DEFECTS; VACANCIES;

ATOMS;

EID: 77956299705     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3476280     Document Type: Conference Paper

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