Atomistic study of the melting behavior of single crystalline wurtzite gallium nitride nanowires

Journal of Materials Research

Volumn 22, Issue 3, 2007, Pages 742-747

  Wang, Zhiguo ^a,b   Zu, Xiaotao ^a   Gao, Fei ^b   Weber, William J ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MELTING POINT; MOLECULAR DYNAMICS; NANOWIRES; SINGLE CRYSTALS;

GALLIUM NITRIDE NANOWIRES; STILLINGER-WEBER POTENTIAL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33947204967     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0095     Document Type: Article

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