Defect-enhanced charge transfer by ion-solid interactions in sic using large-scale abinitio molecular dynamics simulations

Physical Review Letters

Volumn 103, Issue 2, 2009, Pages

  Gao, Fei ^a   Xiao, Haiyan ^b   Zu, Xiaotao ^b   Posselt, Matthias ^c   Weber, William J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB-INITIO MOLECULAR DYNAMICS; CHARGED DEFECTS; CRYSTALLOGRAPHIC DIRECTIONS; DEFECT FORMATION; DISPLACEMENT THRESHOLD ENERGY; DYNAMIC PROCESS; EMPIRICAL POTENTIALS; ION-SOLID INTERACTIONS; RECOIL ATOMS;

ATOMS; BEAM PLASMA INTERACTIONS; CHARGE TRANSFER; DEFECTS; MASS TRANSFER; MOLECULAR DYNAMICS; SILICON CARBIDE;

ION EXCHANGE;

EID: 68849095945     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.103.027405     Document Type: Article

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