SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 15, Issue 5, 2003, Pages 419-421

High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition

(4) Chen, Xihong a Xu, Jun a Wang, R M a Yu, Dapeng a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0037418381 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200390097 Document Type: Article

Times cited : (87)

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